收藏本站
Preliminary Technical Information
TrenchT2 TM HiperFET TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFH160N15T2
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
150V
160A
9.0m ?
160ns
Fast Intrinsic Diode
TO-247
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M ?
150
150
V
V
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
D
S
Tab
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
160
440
80
1.5
A
A
A
J
G = Gate
S = Source
D = Drain
Tab = Drain
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
M d
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175 ° C
T C = 25 ° C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
15
880
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
V/ns
W
° C
° C
° C
°C
°C
Nm/lb.in.
g
Features
International Standard Package
High Current Handling Capability
Fast Intrinsic Diode
Dynamaic dv/dt Rated
Avalanche Rated
Low R DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Applications
DC-DC Converters
BV DSS
V GS(th)
V GS = 0V, I D = 250μA
V DS = V GS , I D = 1mA
150
2.5
4.5
V
V
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
I GSS
I DSS
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
± 200 nA
10 μ A
1 mA
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
7.7
9.0 m ?
Applications
? 2010 IXYS CORPORATION, All Rights Reserved
DS100228A(04/10)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFH160N15T MOSFET N-CH 150V 160A TO-247
IXFH16N90Q MOSFET N-CH 900V 16A TO-247
IXFH20N100P MOSFET N-CH 1000V 20A TO-247
IXFH20N60 MOSFET N-CH 600V 20A TO-247AD
IXFH22N55 MOSFET N-CH 550V 22A TO-247AD
IXFH22N60P MOSFET N-CH 600V 22A TO-247
IXFH230N075T2 MOSFET N-CH 75V 230A TO-247
IXFH230N10T MOSFET N-CH 100V 230A TO-247
相关代理商/技术参数
IXFH16N120P 功能描述:MOSFET 16 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N50P 功能描述:MOSFET 500V 16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N50P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N80P 功能描述:MOSFET 16 Amps 800V 0.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH16N90 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFH16N90Q 功能描述:MOSFET 16 Amps 900V 0.65 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH170N10P 功能描述:MOSFET 170 Amps 100V 0.009 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFH17N60 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs